IPB083N10N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPB083N10N3 G
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 125 W 100 V Continuous Drain Current (ID):80 A 55 nC
| Parameter | Value |
|---|---|
| Gate Charge | 55 nC |
| Gate to Source Threshold Voltage | 2 V |
| Continuous Drain Current (ID) | 80 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7.2 mΩ |
| Input capacitance | 3.98 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 62
Distributors
pcbx
pcbxUnit Price$1.60813
Ext.Price$1.60813
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.60813 | $1.60813 |
| 10 | $1.03874 | $10.38740 |
| 25 | $0.92716 | $23.17900 |
| 50 | $0.82756 | $41.37800 |
| 100 | $0.73866 | $73.86600 |
| 300 | $0.67804 | $203.41200 |
| 500 | $0.62239 | $311.19500 |
| 1000 | $0.53347 | $533.47000 |
| 3000 | $0.51121 | $1533.63000 |
| 5000 | $0.48987 | $2449.35000 |